XTR1K1210 - HIGH TEMPERATURE, 10A, 1200V SiC Schottky DIODE
XTR1K1210 is 10A, 1200V 4H-SiC junction barrier Schottky di-ode able to reliably operate from -60°C to +230°C, with junction temperature able to reach +250°C.
This diode has zero reverse recovery charge, which makes it ideally suited for high-frequency and high-efficiency power sys-tems with minimum or no cooling requirements.
XTR1K1210 has been designed to reduce system cost and ease adoption.
The XTR1K1210 is available in ruggedized thru-hole packages. Parts are also available as bare dies.
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|Product Reference||Temperature Range||Package||Pin Count||Marking|
|XTR1K1210-BD||-60°C to +230°C||Bare die||XTR1K1210|
|XTR1K1210-T||-60°C to +230°C||TO-257AA||3||XTR1K1210|