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  • Operational beyond the -60°C to +230°C temperature range.
  • Supply voltage from 7V to 40V.
  • Integrated charge-pump inside pull-up drivers allowing 100% duty-cycle PWM control signal.
  • Internal 5V LDO regulator.
  • Safe start-up of normally-on devices.
  • Isolated data transmission trough multi-channel transceiver.
  • Half bridge cross-conduction protection.
  • Double pull-up driver with possible pulsed operation with combined 6A capability.
  • Pull-down driver with 3A capability.
  • On-chip active Miller clamp switch with 3A capability.
  • Resistor-programmable Under voltage lockout (UVLO).
  • Resistor-programmable drain desaturation detection.
  • Resistor-programmable gate failure detection.
  • Resistor-programmable over-current protection level.
  • Capacitor-programmable pulsed operation of pull-up driver.
  • Capacitor-programmable blanking time of protections.
  • Capacitor programmable active Miller clamp.
  • Latch-up free.
  • Ruggedized SMT packages.
  • Also available as bare die.

XTR26010 is a high-temperature, high reliability isolated power transistor driver integrated circuit, designed with a high focus on offering a robust, reliable, compact and efficient solution for driv-ing a large variety of high-temperature, high-voltage, and high-efficiency power transistors. XTR26010 is able to drive normally-On and normally-Off power transistors in Silicon Carbide (SiC), Gallium Nitride (GaN) and standard silicon, including JFETs, MOSFETs, BJTs, SJTs and MESFETs.
The XTR26010 circuit implements cross-conduction prevention between high-side and low-side switches through isolated com-munication between high-side and low-side drivers, allowing safe operation at system level. Other features include internal voltage regulator, 5-channel transceiver (2 TX and 3 RX) for isolated data transmission with the microcontroller and between high side and low side drivers. the XTR26010 includes two independent pull-up gate-drive-channels (PU_DR1 and PU_DR2) each capable of sourcing a typical 3A peak current, with a programmable pulse-width for DR1 channel. The XTR26010 includes two pull-down gate-drive-channels each capable of sinking a typical 3A peak current (PD_DR and PD_MC). The PD_DR channel is used for the effective turn-off of the power transistor, while PD_MC chan-nel is used for Active Miller Clamping (AMC) function thanks to its capacitor-programmable delay versus PD_DR channel.
The circuit includes soft shut-down capability that safely shuts down the power transistor in case of fault. The XTR26010 is able to detect independent failures on the drain, gate and source of the power switch.
The XTR26010 can be used standalone or as driver controller with multiplied drive capabilities using the XTR25010.
XTR26010 parts are available in ruggedized SMT packages as well as in bare die.
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  • Reliability-critical, Automotive, Aeronautics & Aerospace, Down-hole, Energy Conversion, Solar.
  • Intelligent Power Modules (IPM).
  • Motor drives.
  • Uninterruptible power supplies (UPS).
  • Power inverters.
  • Power conversion and power factor correction (PFC).
  • DC/DC converters and switched mode power supplies (SMPS).
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Product Reference Temperature Range Package Pin Count Marking
XTR26010-BD-60°C to +230°CBare die
XTR26011-LJ-60°C to +230°CCeramic LJCC68XTR26011

       Other packages and packaging configurations possible upon request.
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Documentation :
Datasheet :

DS-00390-13-XTR26010-High Temperature Intelligent Gate Driver

Application Notes :

Demo Boards :

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