XTR26010 - HIGH TEMPERATURE, INTELLIGENT GATE DRIVER
XTR26010 is a high-temperature, high reliability isolated power transistor driver integrated circuit, designed with a high focus on offering a robust, reliable, compact and efficient solution for driv-ing a large variety of high-temperature, high-voltage, and high-efficiency power transistors. XTR26010 is able to drive normally-On and normally-Off power transistors in Silicon Carbide (SiC), Gallium Nitride (GaN) and standard silicon, including JFETs, MOSFETs, BJTs, SJTs and MESFETs.
The XTR26010 circuit implements cross-conduction prevention between high-side and low-side switches through isolated com-munication between high-side and low-side drivers, allowing safe operation at system level. Other features include internal voltage regulator, 5-channel transceiver (2 TX and 3 RX) for isolated data transmission with the microcontroller and between high side and low side drivers. the XTR26010 includes two independent pull-up gate-drive-channels (PU_DR1 and PU_DR2) each capable of sourcing a typical 3A peak current, with a programmable pulse-width for DR1 channel. The XTR26010 includes two pull-down gate-drive-channels each capable of sinking a typical 3A peak current (PD_DR and PD_MC). The PD_DR channel is used for the effective turn-off of the power transistor, while PD_MC chan-nel is used for Active Miller Clamping (AMC) function thanks to its capacitor-programmable delay versus PD_DR channel.
The circuit includes soft shut-down capability that safely shuts down the power transistor in case of fault. The XTR26010 is able to detect independent failures on the drain, gate and source of the power switch.
The XTR26010 can be used standalone or as driver controller with multiplied drive capabilities using the XTR25010.
XTR26010 parts are available in ruggedized SMT packages as well as in bare die.
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|Product Reference||Temperature Range||Package||Pin Count||Marking|
|XTR26010-BD||-60°C to +230°C||Bare die|
|XTR26011-LJ||-60°C to +230°C||Ceramic LJCC||68||XTR26011|